MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
نویسندگان
چکیده
منابع مشابه
MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
We present a study on the high performance p-type AlxGa1 xN (x 1⁄4 0:35) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1 xN (x 1⁄4 0:35) alloy is investigated. From the Hall effect and I–V transmission line model measurements, a p-type resistivity of 3.5O cm for Al...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2006
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.11.109